Atomically controlled plasma processing for epitaxial growth of group IV semiconductor nanostructures

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Plasma enhanced chemical vapor deposition (CVD) is useful to improve surface flatness and abruptness of doping profile and heterointerface by lowering epitaxial growth temperature for group IV semiconductors. By N and B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, heavy atomic-layer doping has been demonstrated by using electron cyclotron resonance (ECR) plasma enhanced CVD. Most of the incorporated N or B atom amount of about 7x1014 cm-2in the atomic-layer doped Si film is confined within an about 2 nm-thick region. Moreover, using a 84 % relaxed Ge buffer layer formed on Si(100) by ECR plasma enhanced CVD, it is found that the hole mobility is enhanced by introduction of strain to nanometer order thick Si film, and the mobility enhancement as high as about 3 is observed.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages229-236
Number of pages8
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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