Atomically controlled plasma processing for epitaxial growth of group IV semiconductors

Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By utilizing an electron-cyclotron-resonance plasma enhanced chemical vapor deposition (CVD) for low-temperature epitaxial growth of group IV semiconductors, atomically controlled plasma processing has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements in the plasma processing are reviewed: (1) By N and B atomic-layer formation and Si epitaxial growth on Si(100), heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in an about 2 nm-thick region. (2) Using a 84% relaxed Ge buffer layer formed on Si(100) by the plasma CVD, formation of a B-doped highly strained Si film with nanometer-order thickness with typical hole mobility enhancement as high as about 3 was achieved.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1521-1524
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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