Atomically controlled impurity doping for future si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Contribution to conferencePaper

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 monolayers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH 4, NH3, PH3, CH4 and SiH 3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Epitaxial Si or SiGe grown on N, P or B layers already-formed on Si(100) or SiGe(100) surface is achieved. It is found that higher level of electrical active P atoms exist in such film, compared with doping under thermal equilibrium conditions. Furthermore, the capability of atomically controlled processing for doping of advanced devices with critical requirements for dopant dose and location control is demonstrated for the base doping of SiGe:C heterojunction bipolar transistors (HBTs). These results open the way to atomically controlled technology for ultra-large-scale integrations.

Original languageEnglish
Pages557-562
Number of pages6
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Murota, J., Sakuraba, M., & Tillack, B. (2004). Atomically controlled impurity doping for future si-based devices. 557-562. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.