Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The concept of atomically controlled CVD technology for group IV semiconductors is based on atomic-order surface reaction control. The epitaxial growth of strained Si1-x-yGexCy layer with high Ge fraction and high C fraction on unstrained and tensile-strained Si(100) is performed at 500 or 550°C by ultraclean low-pressure CVD. The relationship between vertical lattice constant and Raman shift in strained Si 1-x-yGexCy layer with high Ge and high C fraction is explained quantitatively. It is confirmed that growth characteristics as well as electrical activity of impurity in the strained layer are influenced by the substrate surface strain. The influence of atomic-layer doping on strain in epitaxial growth are described. These results open the way to atomically controlled CVD technology for doping and strain engineering for future device generations.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 2012 Oct 292012 Nov 1

Publication series

NameICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period12/10/2912/11/1

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration'. Together they form a unique fingerprint.

Cite this