Atomically controlled CVD technology for future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Contribution to conferencePaper

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si or SiGe epitaxial growth on N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, electrical characteristics of atomic-layer doped epitaxial films and the capability ol atomically controlled processing for doping of advanced devices are demonstrated. These results open the way to atomically controlled CVD technology for ultra-largescale integrations.

Original languageEnglish
Pages53-66
Number of pages14
Publication statusPublished - 2005 Dec 1
Event207th ECS Meeting - Quebec, Canada
Duration: 2005 May 162005 May 20

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Murota, J., Sakuraba, M., & Tillack, B. (2005). Atomically controlled CVD technology for future Si-based devices. 53-66. Paper presented at 207th ECS Meeting, Quebec, Canada.