Atomically controlled CVD processing of group IV semiconductors for strain engineering and doping in ultralarge scale integration

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

By atomic layer growth of C, Ge and B on Si (100) surface and subsequent Si cap layer growth, heavy atomic-layer doping is achieved at temperatures below 500°C. Sub-atomic layer of C, Ge or B is confined within an about 1 nm-thick region. It is confirmed that the incorporation of C atoms at substitutional site in Si is influenced by substrate surface strain and is larger than that of in-situ doping. Atomic layer doping of Ge is enhanced by the tensile strain in the substrate, comparing with those of C and B. In the nm-thick region of atomic layer doping, strain generation is not observed. It is also confirmed that growth characteristics as well as electrical activity of impurity in the strained layer are influenced by the substrate surface strain before the layer growth. These results demonstrate the capability of atomically controlled CVD technology of group IV semiconductors for strain engineering and doping in ultralarge scale integration.

Original languageEnglish
Title of host publication2013 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 4
Pages55-64
Number of pages10
Edition1
DOIs
Publication statusPublished - 2013 Oct 21
Event4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013 - Villard-de-Lans, France
Duration: 2013 Jul 72013 Jul 12

Publication series

NameECS Transactions
Number1
Volume54
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013
CountryFrance
CityVillard-de-Lans
Period13/7/713/7/12

ASJC Scopus subject areas

  • Engineering(all)

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    Murota, J., Sakuraba, M., & Tillack, B. (2013). Atomically controlled CVD processing of group IV semiconductors for strain engineering and doping in ultralarge scale integration. In 2013 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 4 (1 ed., pp. 55-64). (ECS Transactions; Vol. 54, No. 1). https://doi.org/10.1149/05401.0055ecst