Atomically controlled CVD processing for future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si1-xGex it is suggested that nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms at the surface by heat-treatment. The B atomic-layer doping result suggests that atomic-order Si capping on the B atomic layer already-formed on (100) surface at low temperatures such as 180-300 °C improves the electrical activity even with the subsequent Si capping at 500 °C. Additionally, it is confirmed that the band engineering for group IV semiconductors becomes possible by the strain control of the Si1-xGex/Si heterostructure due to striped patterning. These results demonstrate the capability of the atomically controlled CVD processing approach for future Si-based devices.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1312-1315
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Murota, J., Sakuraba, M., & Tillack, B. (2008). Atomically controlled CVD processing for future Si-based devices. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1312-1315). [4734796] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734796