@inproceedings{67107421510d4f0fa2c2c2bb88ddce0e,
title = "Atomically controlled CVD processing for doping of Si-based group IV semiconductors",
abstract = "The concept of atomically controlled processing for group IV semiconductors is shown based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Si or Si1-xGex epitaxial growth on N, P or C atomic layer formed on Si(100) or Si1-xGex (100) surface, is achieved at temperatures below 500 °C. In the Si 0.5Ge0.5 epitaxial layer, a N doping dose of 6x10 14 cm-2 is confined within an about 1.5 nm thick region and the confined N atoms in Si1-xGex preferentially form Si-N bonds. In Si cap layer growth on the P atomic layer formed on Si 1-xGex(100) with the P atom amount below about 4x10 14 cm-2 using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within the 1 nm region around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si1-xGex/Si heterointerface. These results open the way to atomically controlled processing for ULSIs.",
author = "Junichi Murota and Masao Sakuraba and Bernd Tillack",
year = "2009",
doi = "10.1149/1.3203954",
language = "English",
isbn = "9781566777445",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "177--184",
booktitle = "ECS Transactions - ULSI Process Integration 6",
edition = "7",
note = "ULSI Process Integration 6 - 216th Meeting of the Electrochemical Society ; Conference date: 04-10-2009 Through 09-10-2009",
}