Atomically controlled CVD processing for doping of Si-based group IV semiconductors

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The concept of atomically controlled processing for group IV semiconductors is shown based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Si or Si1-xGex epitaxial growth on N, P or C atomic layer formed on Si(100) or Si1-xGex (100) surface, is achieved at temperatures below 500 °C. In the Si 0.5Ge0.5 epitaxial layer, a N doping dose of 6x10 14 cm-2 is confined within an about 1.5 nm thick region and the confined N atoms in Si1-xGex preferentially form Si-N bonds. In Si cap layer growth on the P atomic layer formed on Si 1-xGex(100) with the P atom amount below about 4x10 14 cm-2 using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within the 1 nm region around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si1-xGex/Si heterointerface. These results open the way to atomically controlled processing for ULSIs.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages177-184
Number of pages8
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Murota, J., Sakuraba, M., & Tillack, B. (2009). Atomically controlled CVD processing for doping of Si-based group IV semiconductors. In ECS Transactions - ULSI Process Integration 6 (7 ed., pp. 177-184). (ECS Transactions; Vol. 25, No. 7). https://doi.org/10.1149/1.3203954