Atomically controlled CVD processing for doping in future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

By atomic layer formation of B or P on Si1-xGex(100) surface and subsequent Si capping layer deposition, heavy atomic-layer doping is achieved at temperatures below 500°C B doping dose of about 7×10 14 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 ×1013 cm -2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGex(100) with P atom amount below about 4×1014 cm-2 using Si 2H6 instead of SiH4, it is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain.

Original languageEnglish
Title of host publication2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
Pages181-188
Number of pages8
Edition1
DOIs
Publication statusPublished - 2011 Dec 1
Event3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III - Hong Kong, China
Duration: 2011 Jun 272011 Jul 1

Publication series

NameECS Transactions
Number1
Volume37
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III
CountryChina
CityHong Kong
Period11/6/2711/7/1

ASJC Scopus subject areas

  • Engineering(all)

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