Atomic transfer through interfacial free volumes in Sn 65.4Bi34.6 eutectic systems

K. Sato, H. Murakami, K. Fujimoto, M. Nakata, T. Oka, Y. Kobayashi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Atomic transfer through the interfaces upon Bi precipitation is specifically investigated with respect to vacancy-sized free volumes for a Sn65.4Bi34.6 eutectic alloy of a highly heterogeneous system by making full use of backscattering electron imaging, small-angle x-ray scattering, x-ray diffraction, and positron annihilation spectroscopy. Bi-rich particles of ∼100nm with segregated nanocrystallites of ∼30nm are observed for the alloy cooled at a cooling rate of 10-1Ks -1. Bi particles and nanocrystallites intergrow with each other up to ∼1νm and ∼55nm, respectively, by an extremely slow cooling of 10-5Ks-1. Regardless of the cooling rate, high concentrations of vacancy-sized free volumes are found to be located at interfaces among short-range ordered phases. For the alloy cooled at 10 -1Ks-1, the free volumes are dominantly surrounded by Bi atoms. Decreasing the cooling rate down to 10-5Ks-1 changes the free volumes with Bi-rich chemical surroundings to an Sn-rich environment, which directly indicates atomic transfer through the interfaces upon Bi precipitation. The present results demonstrate that the kinetics of vacancy-sized free volumes in the interfaces plays an important role in understanding the precipitation mechanism in nanostructured heterogeneous materials.

Original languageEnglish
Article number395234
JournalJournal of Physics Condensed Matter
Volume20
Issue number39
DOIs
Publication statusPublished - 2008 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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