Atomic topography change of SiO2/Si interfaces during thermal oxidation

Daisuke Hojo; Norio Tokuda; Kikuo Yamabe

doi:10.1143/jjap.41.l505

Atomic topography change of SiO₂/Si interfaces during thermal oxidation

Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journal › Letter › peer-review

7 Citations (Scopus)

Abstract

Using an Si(111) surface with atomically flat, wide terraces, the topographic change of SiO₂/Si interfaces during thermal oxidation was investigated at an oxidation temperature of 1050°C using an atomic force microscope. Vestiges of two-dimensional oxide-island growth were observed at the interface. Then, a histogram for roughness height distribution based on atomic force microscope (AFM) data was plotted in order to evaluate the roughness within the terraces at the interface instead of the root mean square (RMS). This method revealed that the SiO₂/Si interface consists of at least three layers separated from one another by 0.3 nm. This result provides evidence of the layer-by-layer model breaking down at the SiO₂/Si interfaces.

Original language	English
Pages (from-to)	L505-L508
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	5
DOIs	https://doi.org/10.1143/jjap.41.l505
Publication status	Published - 2002 May 1
Externally published	Yes

Keywords

AFM
Interface
Layer-by-layer
Oxidation
Silicon
Silicon dioxide
Step
Terrace

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.l505

Cite this

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title = "Atomic topography change of SiO2/Si interfaces during thermal oxidation",

abstract = "Using an Si(111) surface with atomically flat, wide terraces, the topographic change of SiO2/Si interfaces during thermal oxidation was investigated at an oxidation temperature of 1050°C using an atomic force microscope. Vestiges of two-dimensional oxide-island growth were observed at the interface. Then, a histogram for roughness height distribution based on atomic force microscope (AFM) data was plotted in order to evaluate the roughness within the terraces at the interface instead of the root mean square (RMS). This method revealed that the SiO2/Si interface consists of at least three layers separated from one another by 0.3 nm. This result provides evidence of the layer-by-layer model breaking down at the SiO2/Si interfaces.",

keywords = "AFM, Interface, Layer-by-layer, Oxidation, Silicon, Silicon dioxide, Step, Terrace",

author = "Daisuke Hojo and Norio Tokuda and Kikuo Yamabe",

year = "2002",

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language = "English",

volume = "41",

pages = "L505--L508",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Atomic topography change of SiO2/Si interfaces during thermal oxidation

AU - Hojo, Daisuke

AU - Tokuda, Norio

AU - Yamabe, Kikuo

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Using an Si(111) surface with atomically flat, wide terraces, the topographic change of SiO2/Si interfaces during thermal oxidation was investigated at an oxidation temperature of 1050°C using an atomic force microscope. Vestiges of two-dimensional oxide-island growth were observed at the interface. Then, a histogram for roughness height distribution based on atomic force microscope (AFM) data was plotted in order to evaluate the roughness within the terraces at the interface instead of the root mean square (RMS). This method revealed that the SiO2/Si interface consists of at least three layers separated from one another by 0.3 nm. This result provides evidence of the layer-by-layer model breaking down at the SiO2/Si interfaces.

AB - Using an Si(111) surface with atomically flat, wide terraces, the topographic change of SiO2/Si interfaces during thermal oxidation was investigated at an oxidation temperature of 1050°C using an atomic force microscope. Vestiges of two-dimensional oxide-island growth were observed at the interface. Then, a histogram for roughness height distribution based on atomic force microscope (AFM) data was plotted in order to evaluate the roughness within the terraces at the interface instead of the root mean square (RMS). This method revealed that the SiO2/Si interface consists of at least three layers separated from one another by 0.3 nm. This result provides evidence of the layer-by-layer model breaking down at the SiO2/Si interfaces.

KW - AFM

KW - Interface

KW - Layer-by-layer

KW - Oxidation

KW - Silicon

KW - Silicon dioxide

KW - Step

KW - Terrace

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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