A series of ordered superstructures on the surface of an epitaxial GaN(0001) film grown on the SiC(0001) substrate has been investigated in situ in an ultrahigh vacuum by STM and RHEED techniques. Based on the comparison of high-resolution STM-images with the results of calculation of the total energy, a geometrical model describing the formation of the major structures with a (2×2) and (4×4) symmetry has been developed. It has been found that the (5×5) structural phase consists of a linear chain of Ga adatoms along the [112̄0] direction, which are irregularly arranged due to the lattice relaxation.
|Number of pages||9|
|Journal||Surface Investigation X-Ray, Synchrotron and Neutron Techniques|
|Publication status||Published - 2001 Dec 1|
ASJC Scopus subject areas
- Surfaces, Coatings and Films