Atomic structures on the (0001) surface of gallium nitride

R. Z. Bakhtizin, Q. K. Xue, Q. Z. Xue, Y. Hasegawa, T. Sakurai

Research output: Contribution to journalArticlepeer-review


A series of ordered superstructures on the surface of an epitaxial GaN(0001) film grown on the SiC(0001) substrate has been investigated in situ in an ultrahigh vacuum by STM and RHEED techniques. Based on the comparison of high-resolution STM-images with the results of calculation of the total energy, a geometrical model describing the formation of the major structures with a (2×2) and (4×4) symmetry has been developed. It has been found that the (5×5) structural phase consists of a linear chain of Ga adatoms along the [112̄0] direction, which are irregularly arranged due to the lattice relaxation.

Original languageEnglish
Pages (from-to)1679-1687
Number of pages9
JournalSurface Investigation X-Ray, Synchrotron and Neutron Techniques
Issue number11
Publication statusPublished - 2001
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films


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