TY - JOUR
T1 - Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy
AU - Bakhtizin, R. Z.
AU - Hashizume, T.
AU - Xue, Q. K.
AU - Sakurai, T.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 1997/11
Y1 - 1997/11
N2 - A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2 × 4-α, β, γ and c(4 × 4) phases are examined in detail. High-resolution STM images indicate that 2 × 4-α, β and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2 × 4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.
AB - A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2 × 4-α, β, γ and c(4 × 4) phases are examined in detail. High-resolution STM images indicate that 2 × 4-α, β and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2 × 4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.
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U2 - 10.1070/PU1997v040n11ABEH000309
DO - 10.1070/PU1997v040n11ABEH000309
M3 - Article
AN - SCOPUS:21944447231
VL - 40
SP - 1175
EP - 1187
JO - Physics-Uspekhi
JF - Physics-Uspekhi
SN - 1063-7869
IS - 11
ER -