Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

R. Z. Bakhtizin, T. Hashizume, Q. K. Xue, T. Sakurai

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    4 Citations (Scopus)

    Abstract

    A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2 × 4-α, β, γ and c(4 × 4) phases are examined in detail. High-resolution STM images indicate that 2 × 4-α, β and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2 × 4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.

    Original languageEnglish
    Pages (from-to)1175-1187
    Number of pages13
    JournalPhysics-Uspekhi
    Volume40
    Issue number11
    DOIs
    Publication statusPublished - 1997 Nov 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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    Bakhtizin, R. Z., Hashizume, T., Xue, Q. K., & Sakurai, T. (1997). Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy. Physics-Uspekhi, 40(11), 1175-1187. https://doi.org/10.1070/PU1997v040n11ABEH000309