Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces

R. Z. Bakhtizin, Qikun Xue, T. Sakurai, T. Hashizume

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.

    Original languageEnglish
    Pages (from-to)1016-1021
    Number of pages6
    JournalJournal of Experimental and Theoretical Physics
    Volume84
    Issue number5
    DOIs
    Publication statusPublished - 1997 May

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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