Abstract
Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.
| Original language | English |
|---|---|
| Pages (from-to) | 1016-1021 |
| Number of pages | 6 |
| Journal | Journal of Experimental and Theoretical Physics |
| Volume | 84 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1997 May |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Bakhtizin, R. Z., Xue, Q., Sakurai, T., & Hashizume, T. (1997). Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces. Journal of Experimental and Theoretical Physics, 84(5), 1016-1021. https://doi.org/10.1134/1.558238