Abstract
Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.
Original language | English |
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Pages (from-to) | 1016-1021 |
Number of pages | 6 |
Journal | Journal of Experimental and Theoretical Physics |
Volume | 84 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1997 May |
ASJC Scopus subject areas
- Physics and Astronomy(all)