Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces

R. Z. Bakhtizin; Qikun Xue; T. Sakurai; T. Hashizume

doi:10.1134/1.558238

Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces

R. Z. Bakhtizin, Qikun Xue, T. Sakurai, T. Hashizume

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.

Original language	English
Pages (from-to)	1016-1021
Number of pages	6
Journal	Journal of Experimental and Theoretical Physics
Volume	84
Issue number	5
DOIs	https://doi.org/10.1134/1.558238
Publication status	Published - 1997 May

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.",

author = "Bakhtizin, {R. Z.} and Qikun Xue and T. Sakurai and T. Hashizume",

year = "1997",

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AU - Bakhtizin, R. Z.

AU - Xue, Qikun

AU - Sakurai, T.

AU - Hashizume, T.

PY - 1997/5

Y1 - 1997/5

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AB - Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.

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Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces

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