Abstract
The atomic structure of the Si(112)7X1-In surface has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED), and a model is proposed on the basis of the high resolution dual bias STM images and the systematic weakening of the LEED fractional-order beams, for further investigation. In sharp contrast to what has been reported for the Si(112)6X1-Ga surface, indium atoms in the Si(112)7X1-In surface do not occupy the step-edge site.
| Original language | English |
|---|---|
| Pages (from-to) | 9928-9931 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 15 |
| Publication status | Published - 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics