The atomic structure of the Si(112)7X1-In surface has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED), and a model is proposed on the basis of the high resolution dual bias STM images and the systematic weakening of the LEED fractional-order beams, for further investigation. In sharp contrast to what has been reported for the Si(112)6X1-Ga surface, indium atoms in the Si(112)7X1-In surface do not occupy the step-edge site.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2000|
ASJC Scopus subject areas
- Condensed Matter Physics