Atomic structure of the Si(112)7X1-In surface

Zheng Gai, R. G. Zhao, W. S. Yang, T. Sakurai

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The atomic structure of the Si(112)7X1-In surface has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED), and a model is proposed on the basis of the high resolution dual bias STM images and the systematic weakening of the LEED fractional-order beams, for further investigation. In sharp contrast to what has been reported for the Si(112)6X1-Ga surface, indium atoms in the Si(112)7X1-In surface do not occupy the step-edge site.

Original languageEnglish
Pages (from-to)9928-9931
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number15
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Condensed Matter Physics

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