Atomic structure of the GaAs(001)-(2 × 4) surface under As flux

Akihiro Ohtake, Masashi Ozeki, Tetsuji Yasuda, Takashi Hanada

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50 Citations (Scopus)

Abstract

The α, β, and γ phases of the GaAs(001)-(2 × 4) surface have been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). We have measured RHEED rocking curves and RD spectra from GaAs(001) under an As flux of 2.5 × 10-7 Torr, and have identified the temperature ranges where each of the α, β, and γ phases is stable. The 2 × 4 reconstruction was observed in the range of 480-600°C. The β phase, which is stable in the range of 510-550°C, has a β 2(2 × 4) structure, in good agreement with previous experimental and theoretical results. The γ and α phases are stable below 510°C and above 550°C, respectively. While the data from the γ phase are well explained by a mixture of β 2(2 × 4) and c(4 × 4) phases, we propose that the α phase has a β 2(2 × 4) structure, the atomic coordinates of which are slightly different from those of the β phase.

Original languageEnglish
Article number165315
Pages (from-to)1653151-16531510
Number of pages14878360
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number16
Publication statusPublished - 2002 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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