Atomic structure of segregated boron on Si(001) surface; Scanning tunneling microscopy and cluster model calculation study

T. Komeda, Y. Nishioka

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The atomic configuration of B atoms segregated on the surface of Si(001)-2 x 1 is investigated with scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). STM images of the unoccupied state show very characteristic paired protrusions located on both sides of Si dimer rows in a symmetrical manner. They can be observed only at a high sample bias (> 1.4 V) and are enhanced at ∼2.0 V. This is confirmed quantitatively by STS measurements. The STM and STS data are compared with a cluster model calculation based on a local density approximation method. The results show that a model where a B atom bridges two neighbouring Si dimers in a dimer row can reproduce the STM and STS observations.

Original languageEnglish
Pages (from-to)38-45
Number of pages8
JournalSurface Science
Volume405
Issue number1
DOIs
Publication statusPublished - 1998 May 12
Externally publishedYes

Keywords

  • Density functional calculations
  • Low index single crystal surfaces
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopies
  • Semiconducting surfaces
  • Surface segregation
  • Surface stress
  • Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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