Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal

Ryo Ishikawa, Andrew R. Lupini, Fumiyasu Oba, Scott D. Findlay, Naoya Shibata, Takashi Taniguchi, Kenji Watanabe, Hiroyuki Hayashi, Toshifumi Sakai, Isao Tanaka, Yuichi Ikuhara, Stephen J. Pennycook

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    30 Citations (Scopus)

    Abstract

    Rare-earth doped wurtzite-type aluminum nitride (w-AlN) has great potential for high-efficiency electroluminescent applications over a wide wavelength range. However, because of their large atomic size, it has been difficult to stably dope individual rare-earth atoms into the w-AlN host lattice. Here we use a reactive flux method under high pressure and high temperature to obtain cerium (Ce) doped w-AlN single crystals with pink-colored luminescence. In order to elucidate the atomic structure of the luminescent centers, we directly observe individual Ce dopants in w-AlN using annular dark-field scanning transmission electron microscopy. We find that Ce is incorporated as single, isolated atoms inside the w-AlN lattice occupying Al substitutional sites. This new synthesis method represents a new alternative strategy for doping size-mismatched functional atoms into wide band-gap materials.

    Original languageEnglish
    Article number3778
    JournalScientific reports
    Volume4
    DOIs
    Publication statusPublished - 2014 Jan 21

    ASJC Scopus subject areas

    • General

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    Ishikawa, R., Lupini, A. R., Oba, F., Findlay, S. D., Shibata, N., Taniguchi, T., Watanabe, K., Hayashi, H., Sakai, T., Tanaka, I., Ikuhara, Y., & Pennycook, S. J. (2014). Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal. Scientific reports, 4, [3778]. https://doi.org/10.1038/srep03778