Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope

Y. Hasegawa, H. Kiyama, Q. K. Xue, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    77 Citations (Scopus)

    Abstract

    The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flat GaAs(113) surface.

    Original languageEnglish
    Pages (from-to)2265-2267
    Number of pages3
    JournalApplied Physics Letters
    Volume72
    Issue number18
    DOIs
    Publication statusPublished - 1998

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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