Atomic Structure of Faceted Planes of InAs Quantum Dots on GaAs(001) Studied by Scanning Tunneling Microscopy

Qi Kun Xue, Yukio Hasegawa, Hisashi Kiyama, Toshio Sakurai

    Research output: Contribution to journalConference article

    16 Citations (Scopus)

    Abstract

    Three-dimensional island structure of the lattice mismatched InAs/GaAs(001) system was prepared by molecular beam epitaxy (MBE) and its images showing atomic structure on faceted planes were taken in situ by ultra-high vacuum scanning tunneling microscopy (UHV-STM). (113), (114) and (215) faceted planes are observed on 3D InAs islands. Based on high resolution STM images, atomic structural models of these faceted planes surfaces are proposed. The structure of the (113) planes is found to be different from those observed on nominal-flat InAs and GaAs (113) surfaces. The structural information will be useful for characterization of surface energy/stress of the islands, diffusion process on the surface, and interface properties. The result sheds a light on the formation mechanism and self-organization process of quantum dots.

    Original languageEnglish
    Pages (from-to)500-503
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number1 B
    DOIs
    Publication statusPublished - 1999 Jan 1
    EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
    Duration: 1998 May 311998 Jun 4

    Keywords

    • GaAs
    • InAs
    • Molecular beam epitaxy
    • Quantum dots
    • Scanning tunneling microscopy
    • Surface reconstruction

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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