Abstract
Three-dimensional island structure of the lattice mismatched InAs/GaAs(001) system was prepared by molecular beam epitaxy (MBE) and its images showing atomic structure on faceted planes were taken in situ by ultra-high vacuum scanning tunneling microscopy (UHV-STM). (113), (114) and (215) faceted planes are observed on 3D InAs islands. Based on high resolution STM images, atomic structural models of these faceted planes surfaces are proposed. The structure of the (113) planes is found to be different from those observed on nominal-flat InAs and GaAs (113) surfaces. The structural information will be useful for characterization of surface energy/stress of the islands, diffusion process on the surface, and interface properties. The result sheds a light on the formation mechanism and self-organization process of quantum dots.
| Original language | English |
|---|---|
| Pages (from-to) | 500-503 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 1 B |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
| Event | Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4 |
Keywords
- GaAs
- InAs
- Molecular beam epitaxy
- Quantum dots
- Scanning tunneling microscopy
- Surface reconstruction
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)