Atomic Structure of Faceted Planes of InAs Quantum Dots on GaAs(001) Studied by Scanning Tunneling Microscopy

Qi Kun Xue, Yukio Hasegawa, Hisashi Kiyama, Toshio Sakurai

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


Three-dimensional island structure of the lattice mismatched InAs/GaAs(001) system was prepared by molecular beam epitaxy (MBE) and its images showing atomic structure on faceted planes were taken in situ by ultra-high vacuum scanning tunneling microscopy (UHV-STM). (113), (114) and (215) faceted planes are observed on 3D InAs islands. Based on high resolution STM images, atomic structural models of these faceted planes surfaces are proposed. The structure of the (113) planes is found to be different from those observed on nominal-flat InAs and GaAs (113) surfaces. The structural information will be useful for characterization of surface energy/stress of the islands, diffusion process on the surface, and interface properties. The result sheds a light on the formation mechanism and self-organization process of quantum dots.

Original languageEnglish
Pages (from-to)500-503
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number1 B
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 1998 May 311998 Jun 4


  • GaAs
  • InAs
  • Molecular beam epitaxy
  • Quantum dots
  • Scanning tunneling microscopy
  • Surface reconstruction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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