Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition

Y. Tokumoto, Y. Sato, T. Yamamoto, N. Shibata, Y. Ikuhara

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    9 Citations (Scopus)

    Abstract

    The atomic structure of AlN/Al2O3 interface fabricated by pulsed laser deposition is characterized by high-resolution transmission electron microscopy (HRTEM) combined with systematic multi-slice HRTEM image simulations. It is found that the AlN film deposited on a (0001) Al2O3 substrate grows epitaxially with the orientation relationship of (0001)AlN//(0001) Al2O3 and [1100 ]AlN//[11 20 ]Al2O3, with an atomically sharp interface. The observed interface showed best correspondence with the rigid structural model that AlN is terminated by Al at the interface, while the Al 2O3 substrate is terminated by O. Detailed structural analysis indicates that Al sites at the interface are coordinated by both oxygen and nitrogen in this model, with similar coordination environment in AlN. This favored coordination state at the interface may stabilize the AlN/Al 2O3 interface.

    Original languageEnglish
    Pages (from-to)2553-2557
    Number of pages5
    JournalJournal of Materials Science
    Volume41
    Issue number9
    DOIs
    Publication statusPublished - 2006 May 1

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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