Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor

Yutaka Ohno; Mitsuji Hirata; Seiji Takeda; Ryoji Fujimoto; Ryuichiro Oshima

doi:10.1093/oxfordjournals.jmicro.a023455

Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor

Yutaka Ohno, Mitsuji Hirata, Seiji Takeda, Ryoji Fujimoto, Ryuichiro Oshima

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The structure of extended defects in a silicon crystal introduced during fission-neutron irradiation at 700 K in the JOYO fast breeder-type reactor have been examined by transmission electron diffraction using imaging plates and high-resolution electron microscopy. Defects of different nature i e {113} self-interstitial, and vacancy Frank and stacking fault tetrahedra defects, were observed in the defect colony. This observation revealed a novel distribution of extended defects; that defects of different nature coexist in a microscopic area rather than being mutually annihilated.

Original language	English
Pages (from-to)	380-387
Number of pages	8
Journal	Journal of Electron Microscopy
Volume	45
Issue number	5
DOIs	https://doi.org/10.1093/oxfordjournals.jmicro.a023455
Publication status	Published - 1996
Externally published	Yes

Keywords

High-resolution electron microscopy
Imaging plate
Neutron irradiation
Silicon
Vacancy

ASJC Scopus subject areas

Instrumentation

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10.1093/oxfordjournals.jmicro.a023455

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title = "Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor",

abstract = "The structure of extended defects in a silicon crystal introduced during fission-neutron irradiation at 700 K in the JOYO fast breeder-type reactor have been examined by transmission electron diffraction using imaging plates and high-resolution electron microscopy. Defects of different nature i e {113} self-interstitial, and vacancy Frank and stacking fault tetrahedra defects, were observed in the defect colony. This observation revealed a novel distribution of extended defects; that defects of different nature coexist in a microscopic area rather than being mutually annihilated.",

keywords = "High-resolution electron microscopy, Imaging plate, Neutron irradiation, Silicon, Vacancy",

author = "Yutaka Ohno and Mitsuji Hirata and Seiji Takeda and Ryoji Fujimoto and Ryuichiro Oshima",

note = "Funding Information: Acknowledgments. The authors are indebted to K. Ibe of JEOL Color taking the HRTEM images presented in this paper. We are also Indebted to Dr. Yamada of Fuji Film Co.. for kindly arranging the experiment and analysis of Imaging plates. The present work was supported in part by Grant-in-Aid from the Ministry of Education, Sience, Sports and Culture of Japan.",

year = "1996",

doi = "10.1093/oxfordjournals.jmicro.a023455",

language = "English",

volume = "45",

pages = "380--387",

journal = "Microscopy (Oxford, England)",

issn = "2050-5698",

publisher = "Japanese Society of Microscopy",

number = "5",

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T1 - Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor

AU - Ohno, Yutaka

AU - Hirata, Mitsuji

AU - Takeda, Seiji

AU - Fujimoto, Ryoji

AU - Oshima, Ryuichiro

N1 - Funding Information: Acknowledgments. The authors are indebted to K. Ibe of JEOL Color taking the HRTEM images presented in this paper. We are also Indebted to Dr. Yamada of Fuji Film Co.. for kindly arranging the experiment and analysis of Imaging plates. The present work was supported in part by Grant-in-Aid from the Ministry of Education, Sience, Sports and Culture of Japan.

PY - 1996

Y1 - 1996

N2 - The structure of extended defects in a silicon crystal introduced during fission-neutron irradiation at 700 K in the JOYO fast breeder-type reactor have been examined by transmission electron diffraction using imaging plates and high-resolution electron microscopy. Defects of different nature i e {113} self-interstitial, and vacancy Frank and stacking fault tetrahedra defects, were observed in the defect colony. This observation revealed a novel distribution of extended defects; that defects of different nature coexist in a microscopic area rather than being mutually annihilated.

AB - The structure of extended defects in a silicon crystal introduced during fission-neutron irradiation at 700 K in the JOYO fast breeder-type reactor have been examined by transmission electron diffraction using imaging plates and high-resolution electron microscopy. Defects of different nature i e {113} self-interstitial, and vacancy Frank and stacking fault tetrahedra defects, were observed in the defect colony. This observation revealed a novel distribution of extended defects; that defects of different nature coexist in a microscopic area rather than being mutually annihilated.

KW - High-resolution electron microscopy

KW - Imaging plate

KW - Neutron irradiation

KW - Silicon

KW - Vacancy

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DO - 10.1093/oxfordjournals.jmicro.a023455

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AN - SCOPUS:3743080590

SN - 2050-5698

VL - 45

SP - 380

EP - 387

JO - Microscopy (Oxford, England)

JF - Microscopy (Oxford, England)

IS - 5

ER -

Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor

Abstract

Keywords

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