Atomic-scale visualization of initial growth of homoepitaxial SrTiO 3 thin film on an atomically ordered substrate

Ryota Shimizu; Katsuya Iwaya; Takeo Ohsawa; Susumu Shiraki; Tetsuya Hasegawa; Tomihiro Hashizume; Taro Hitosugi

doi:10.1021/nn202477n

Atomic-scale visualization of initial growth of homoepitaxial SrTiO ₃ thin film on an atomically ordered substrate

Ryota Shimizu, Katsuya Iwaya, Takeo Ohsawa, Susumu Shiraki, Tetsuya Hasegawa, Tomihiro Hashizume, Taro Hitosugi

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The initial homoepitaxial growth of SrTiO₃ on a (√13 × √13)-R33.7° SrTiO₃(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO₃ film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO₃ substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.

Original language	English
Pages (from-to)	7967-7971
Number of pages	5
Journal	ACS Nano
Volume	5
Issue number	10
DOIs	https://doi.org/10.1021/nn202477n
Publication status	Published - 2011 Oct 25

Keywords

interfacial engineering
oxide electronics
pulsed laser deposition
scanning tunneling microscopy
strontium titanate

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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title = "Atomic-scale visualization of initial growth of homoepitaxial SrTiO 3 thin film on an atomically ordered substrate",

abstract = "The initial homoepitaxial growth of SrTiO3 on a (√13 × √13)-R33.7° SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.",

keywords = "interfacial engineering, oxide electronics, pulsed laser deposition, scanning tunneling microscopy, strontium titanate",

author = "Ryota Shimizu and Katsuya Iwaya and Takeo Ohsawa and Susumu Shiraki and Tetsuya Hasegawa and Tomihiro Hashizume and Taro Hitosugi",

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AU - Shimizu, Ryota

AU - Iwaya, Katsuya

AU - Ohsawa, Takeo

AU - Shiraki, Susumu

AU - Hasegawa, Tetsuya

AU - Hashizume, Tomihiro

AU - Hitosugi, Taro

PY - 2011/10/25

Y1 - 2011/10/25

N2 - The initial homoepitaxial growth of SrTiO3 on a (√13 × √13)-R33.7° SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.

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KW - oxide electronics

KW - pulsed laser deposition

KW - scanning tunneling microscopy

KW - strontium titanate

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