Abstract
The initial homoepitaxial growth of SrTiO3 on a (√13 × √13)-R33.7° SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.
Original language | English |
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Pages (from-to) | 7967-7971 |
Number of pages | 5 |
Journal | ACS Nano |
Volume | 5 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 Oct 25 |
Keywords
- interfacial engineering
- oxide electronics
- pulsed laser deposition
- scanning tunneling microscopy
- strontium titanate
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)