Atomic-scale Ti3SiC2 bilayers embedded in SiC: Formation of point Fermi surface

Zhongchang Wang, Susumu Tsukimoto, Rong Sun, Mitsuhiro Saito, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    Semiconductor heterostructures provide a fertile ground for fascinating physical behaviors that are not present in their respective bulk constituents. Here we demonstrate, by combining advanced transmission electron microscopy with atomistic first-principles calculations, that an atomic-scale Ti3 SiC2 -like bilayer can be embedded in SiC interior, forming an atomically ordered multilayer that exhibits an unexpected electronic state with point Fermi surface. The valence charge is confined largely to within the bilayer in a spatially connected manner, serving possibly as a conducting channel to enhance the current flow over the semiconductor. Such a heterostructure with unusual properties is mechanically robust, rendering its patterning for technological applications likely.

    Original languageEnglish
    Article number104101
    JournalApplied Physics Letters
    Issue number10
    Publication statusPublished - 2011 Mar 7

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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