Atomic-scale structure of SixGe1-x solid solutions

I. Yonenaga, M. Sakurai, M. H.F. Sluiter, Y. Kawazoe

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The atomic-scale structure of Czochralski-grown SixGe 1-x binary solid solutions was studied experimentally and theoretically. By extended x-ray absorption fine structure (XAFS) studies it is found that bulk SiGe is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0<x<, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder material and that the bond lengths and bond angles are distorted with the composition.

Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalJournal of Metastable and Nanocrystalline Materials
Volume24-25
DOIs
Publication statusPublished - 2005 Dec 1

Keywords

  • Disordered material
  • Germanium-silicon
  • Local atomic-scale structure
  • Pauling type structure
  • Random mixture
  • Silicon-germanium

ASJC Scopus subject areas

  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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