Atomic-scale structure investigation of CeO2/YSZ/Si hetero-interface by high resolution analytical electron microscope

Takanori Kiguchi, Naoki Wakiya, Nobuyasu Mizutani, Kazuo Shinozaki

Research output: Contribution to journalArticlepeer-review

Abstract

The interface structure and the chemical state on the orientation of a CeO2/YSZ (yttria stabilized zirconia)/Si and YSZ/CeO2/Si hetero structure have been considered using a high-resolution transmission electron microscope (HRETM) equipped with an analytical setup. Although both films showed a columnar structure, they had different orientations. In the YSZ/CeO2/Si hetero structure, the CeO2 layer has a (111) orientation without any in-plane orientation. TEMEELS (electron energy loss spectroscopy) and TEM-EDS (energy dispersive X-ray spectroscopy) analyses showed that there were reacted interface layers due to a reduction of the CeO 2 layer and the oxidation of the Si substrate. In the CeO 2/YSZ/Si hetero structure, the CeO2 layer preferentially had a 001 orientation. The quality of the 001 orientation was increased on an ultra-thin YSZ layer. The interface of CeO2/YSZ (thick) has a semi-coherent interface with misfit dislocations. The interface of CeO 2/YSZ (thin) has been ambiguous due to a disordered structure of the YSZ layer. A TEM-EDS analysis showed that there was only a reacted interface layer due to oxidation of the Si substrate. This means that a thin YSZ layer effects the passivation layer for the reduction of a thermodynamically unstable CeO2 layer against Si, as well as an epitaxy transmission from the Si substrate into the CeO2 layer.

Original languageEnglish
Pages (from-to)419-426
Number of pages8
JournalBUNSEKI KAGAKU
Volume55
Issue number6
DOIs
Publication statusPublished - 2006

Keywords

  • CeO
  • Epitaxy
  • Interface layer
  • TEM
  • YSZ

ASJC Scopus subject areas

  • Analytical Chemistry

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