Atomic-scale planarization of SiO2/Si(001) interfaces

Masaaki Niwa, Masaharu Udagawa, Kenji Okada, Takashi Kouzazki, Robert Sinclair

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Atomically flat silicon-oxide interfaces were obtained after preparing the Si(001)-2×1 reconstructed surface in ultrahigh vacuum (UHV) followed by native oxide growth and then conventional thermal oxidation. When the surface is prepared with conventional wet cleaning prior to oxidation, the flat interfaces initially tend to become rough and then smoother with increasing oxide thickness. In comparison with the conventional interfaces, UHV surface planarization is significant up to oxide thicknesses of about 8 nm. This thickness range will be extremely important for future ultralarge-scale integrated circuits (ULSIs).

Original languageEnglish
Pages (from-to)675-677
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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