Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La 2 O 3 /Si(1 0 0) interfacial transition layer

H. Nohira, T. Shiraishi, K. Takahashi, T. Hattori, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura

    Research output: Contribution to journalConference article

    25 Citations (Scopus)

    Abstract

    The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La 2 O 3 /Si(100) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra.

    Original languageEnglish
    Pages (from-to)493-496
    Number of pages4
    JournalApplied Surface Science
    Volume234
    Issue number1-4
    DOIs
    Publication statusPublished - 2004 Jul 15
    EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
    Duration: 2003 Sep 152003 Sep 19

    Keywords

    • Angle-resolved photoelectron spectroscopy
    • Depth profiling
    • Electronic band structure
    • High-κ dielectrics
    • La O
    • Rutherford back scattering

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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  • Cite this

    Nohira, H., Shiraishi, T., Takahashi, K., Hattori, T., Kashiwagi, I., Ohshima, C., Ohmi, S., Iwai, H., Joumori, S., Nakajima, K., Suzuki, M., & Kimura, K. (2004). Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La 2 O 3 /Si(1 0 0) interfacial transition layer Applied Surface Science, 234(1-4), 493-496. https://doi.org/10.1016/j.apsusc.2004.05.032