Atomic rearrangement of the SiO2-stripped Si(001) surface by thermal annealing

M. Niwa, Y. Watanabe, I. Sumita, H. Iwasaki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The change of the morphology of an oxide-stripped Si(001) surface prepared by HF etching is observed by scanning tunneling microscopy (STM) after sample heating in UHV. The tunneling images after heating the sample to 600°C shows a slightly undulated and disordered surface where only a trace of a (2×2) dimer row is observable. After heating to 800°C, dimer chains which run parallel to the dimer axis are formed. By heating to 1000°C, narrow plateaus grow where a p(2×2) structure with Pandey's missing dimer is realized. The reconstruction proceeds after higher-temperature heating (∼ 1200°C) to reveal the conventional (2×1) reconstructed structure.

Original languageEnglish
Pages (from-to)1360-1365
Number of pages6
Issue numberPART 2
Publication statusPublished - 1992 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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