Atomic order thermal nitridation of Si1-xGex(100) at low temperatures by NH3

Nao Akiyama, Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic order thermal nitridation of Si1-xGex(100) (x=0, 0.4, 1) by NH3 gas environment at low temperature of 400 °C has been investigated using an ultraclean low-pressure chemical vapor deposition system. After NH3 exposure (NH3 partial pressure of 550 Pa for 30 min), it is found that Si(l00), Si 0.6Ge0.4(100) and Ge(100) are nitrided in atomic-order. In the case of Ar purging at cooling period after the nitridation, N atom amounts on Si(100) and Ge(100) are 8.0×1014 and 5.5×l0 14 cm-2, and the amount on Si0.6Ge 0.4(100) is 12.5×10114 cm-2. In the case of H2 purging at the cooling period, it is found that slight reduction of the N atom amount on Si(100) down to 5.6×l014 cm-2 (70 %) is observed, although the N atom amount on Ge(100) is significantly reduced to 1.2×1014 cm-2 (22 %). On the nitrided Si0.6Ge0.4(100), it is also found that such N reduction phenomenon by H2 (down to 30 %) is observed only at the site of the nitrided Ge atom, although the N atom amount is much smaller at the site of the nitrided Si atom. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSiGe and Ge
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages1205-1210
Number of pages6
Edition7
ISBN (Electronic)1566775078
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number7
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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