Atomic-order thermal nitridation of silicon at low temperatures

Takeshi Watanabe; Akihiro Ichikawa; Mascio Sakuraba; Takashi Matsuura; Junichi Murota

doi:10.1149/1.1838946

Atomic-order thermal nitridation of silicon at low temperatures

Takeshi Watanabe, Akihiro Ichikawa, Mascio Sakuraba, Takashi Matsuura, Junichi Murota

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Abstract

Atomic-order nitridation of Si(100) in an NH, environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (n_X) initially increases and tends to saturate to a certain value (d ∼ 5 Å, n_X ∼ 3 × 10¹⁵ cm^-2). At 400°C or lower, on the H-terminated Si surface, the Si-hydride decreases with increasing NH₃ exposure time and becomes hardly observed when n_X reaches nearly to the surface Si atom concentration (6.8 × 10¹⁴ cm^-2). On the H-free Si surface, n_X increases up to ∼2 × 10¹⁴ cm^-2 with the appearance of the Si-hydride instantly after NH₃ exposure. It is expected that NH₃ dissociatively adsorbs on the Si dangling bonds. It is found that n_X is well described by Langmuir-type physical adsorption and reaction of NH₃ on the Si surface. The ultrathin nitride film shows very good characteristics as a mask against oxidation.

Original language	English
Pages (from-to)	4252-4256
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	12
DOIs	https://doi.org/10.1149/1.1838946
Publication status	Published - 1998 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1838946

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title = "Atomic-order thermal nitridation of silicon at low temperatures",

abstract = "Atomic-order nitridation of Si(100) in an NH, environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (nX) initially increases and tends to saturate to a certain value (d ∼ 5 {\AA}, nX ∼ 3 × 1015 cm-2). At 400°C or lower, on the H-terminated Si surface, the Si-hydride decreases with increasing NH3 exposure time and becomes hardly observed when nX reaches nearly to the surface Si atom concentration (6.8 × 1014 cm-2). On the H-free Si surface, nX increases up to ∼2 × 1014 cm-2 with the appearance of the Si-hydride instantly after NH3 exposure. It is expected that NH3 dissociatively adsorbs on the Si dangling bonds. It is found that nX is well described by Langmuir-type physical adsorption and reaction of NH3 on the Si surface. The ultrathin nitride film shows very good characteristics as a mask against oxidation.",

author = "Takeshi Watanabe and Akihiro Ichikawa and Mascio Sakuraba and Takashi Matsuura and Junichi Murota",

year = "1998",

month = dec,

doi = "10.1149/1.1838946",

language = "English",

volume = "145",

pages = "4252--4256",

journal = "Journal of the Electrochemical Society",

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T1 - Atomic-order thermal nitridation of silicon at low temperatures

AU - Watanabe, Takeshi

AU - Ichikawa, Akihiro

AU - Sakuraba, Mascio

AU - Matsuura, Takashi

AU - Murota, Junichi

PY - 1998/12

Y1 - 1998/12

N2 - Atomic-order nitridation of Si(100) in an NH, environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (nX) initially increases and tends to saturate to a certain value (d ∼ 5 Å, nX ∼ 3 × 1015 cm-2). At 400°C or lower, on the H-terminated Si surface, the Si-hydride decreases with increasing NH3 exposure time and becomes hardly observed when nX reaches nearly to the surface Si atom concentration (6.8 × 1014 cm-2). On the H-free Si surface, nX increases up to ∼2 × 1014 cm-2 with the appearance of the Si-hydride instantly after NH3 exposure. It is expected that NH3 dissociatively adsorbs on the Si dangling bonds. It is found that nX is well described by Langmuir-type physical adsorption and reaction of NH3 on the Si surface. The ultrathin nitride film shows very good characteristics as a mask against oxidation.

AB - Atomic-order nitridation of Si(100) in an NH, environment (124-1400 Pa) at 300-650°C has been investigated using an ultraclean low pressure hot-wall reactor system. At 500°C or higher, the N atom concentration (nX) initially increases and tends to saturate to a certain value (d ∼ 5 Å, nX ∼ 3 × 1015 cm-2). At 400°C or lower, on the H-terminated Si surface, the Si-hydride decreases with increasing NH3 exposure time and becomes hardly observed when nX reaches nearly to the surface Si atom concentration (6.8 × 1014 cm-2). On the H-free Si surface, nX increases up to ∼2 × 1014 cm-2 with the appearance of the Si-hydride instantly after NH3 exposure. It is expected that NH3 dissociatively adsorbs on the Si dangling bonds. It is found that nX is well described by Langmuir-type physical adsorption and reaction of NH3 on the Si surface. The ultrathin nitride film shows very good characteristics as a mask against oxidation.

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DO - 10.1149/1.1838946

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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ER -

Atomic-order thermal nitridation of silicon at low temperatures

Abstract

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