One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si1-xGex by NH3, it is suggested that nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms by heattreatment. In the case of epitaxial Ge film, the crystallinity change is not observed by NH3 treatment and N atoms diffuse through nmorder thick Ge layer into Si (100) substrate and form Si nitride even at 500 °C. It is also suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results demonstrate the capability of CVD technology for atomically controlled nitridation of Si, Si1-xGex and Ge for ultralarge scale integration.
|Number of pages||8|
|Publication status||Published - 2014 Jan 1|
|Event||6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States|
Duration: 2014 May 11 → 2014 May 15
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