Abstract
One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found that N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5/Si(100) substrate and form Si nitride, even at 500 °C. By subsequent H2 heat treatment, although N atomic amount in Ge layer is reduced drastically, the reduction of the Si nitride is slight. It is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride and that Ge/atomic-order N layer/ Si1-xGex/Si (100) heterostructure is formed. These results demonstrate the capability of CVD technology for atomically controlled nitridation of group IV semiconductors for ultra-large-scale integration.
Original language | English |
---|---|
Article number | 015001 |
Journal | Advances in Natural Sciences: Nanoscience and Nanotechnology |
Volume | 6 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
Keywords
- Atomically controlled processing
- Chemical vapor deposition
- Ge
- Nitridation
- Si
- ULSI
ASJC Scopus subject areas
- Materials Science(all)
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering