Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration

Junichi Murota, Vinh Le Thanh

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found that N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5/Si(100) substrate and form Si nitride, even at 500 °C. By subsequent H2 heat treatment, although N atomic amount in Ge layer is reduced drastically, the reduction of the Si nitride is slight. It is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride and that Ge/atomic-order N layer/ Si1-xGex/Si (100) heterostructure is formed. These results demonstrate the capability of CVD technology for atomically controlled nitridation of group IV semiconductors for ultra-large-scale integration.

Original languageEnglish
Article number015001
JournalAdvances in Natural Sciences: Nanoscience and Nanotechnology
Volume6
Issue number1
DOIs
Publication statusPublished - 2015 Mar 1

Keywords

  • Atomically controlled processing
  • Chemical vapor deposition
  • Ge
  • Nitridation
  • Si
  • ULSI

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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