Atomic-order planarization of ultrathin sio2/si(00l) interfaces

Masaaki Niwa, Takashi Kouzaki, Kenji Okada, Masaharu Udagawa, Robert Sinclair

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO2/Si(001) interface roughness. Atomically flat SiO2/ Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (Tox) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maximum roughness of the interface was observed at Tox ≃4 nm which corresponds to the “initial oxide thickness” which appeared in the oxide growth kinetics.

Original languageEnglish
Pages (from-to)388-394
Number of pages7
JournalJapanese journal of applied physics
Volume33
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

Keywords

  • AFM
  • Autocovariance function
  • Initial oxidation
  • Interface roughness
  • STM
  • SiO/Si(001) interface
  • TEM
  • UHV cleaning
  • Ultrathin oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Niwa, M., Kouzaki, T., Okada, K., Udagawa, M., & Sinclair, R. (1994). Atomic-order planarization of ultrathin sio2/si(00l) interfaces. Japanese journal of applied physics, 33(1), 388-394. https://doi.org/10.1143/JJAP.33.388