Atomic-order nitridation of SiO2 by nitrogen plasma

Takuya Seino, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Atomic-order nitridation of ∼30 Å thick SiO2 has been investigated by an electron-cyclotron-resonance nitrogen plasma. It is found that the number of nitrogen atoms in the nitrided SiO2 film increases with plasma exposure time and tends to saturate. In the initial nitridation of SiO2, the number of nitrogen atoms in the nitrided SiO2 film depends mainly on the number of incident ions, in dependence on the surface temperature. In the saturation region of the nitridation, it is found that the nitrogen concentration and the depth of the nitrided SiO2 increase with increasing ion energy as well as surface temperature. In the nitridation of SiO2, it is found that the nitrogen bonding structure in the nitrided SiO2 film is changed by ion irradiation with an energy of ∼12 eV and by the temperature increase of the irradiated surface.

Original languageEnglish
Pages (from-to)451-455
Number of pages5
JournalSurface and Interface Analysis
Volume34
Issue number1
DOIs
Publication statusPublished - 2002 Aug 1
EventECASIA'01 Proceedings of the 9th European Conference on Applications of Suface and Interface Analysis - Avignon, France
Duration: 2001 Sep 302001 Oct 5

Keywords

  • Atomic-order nitridation
  • Ion energy
  • Nitrogen plasma
  • Radical and ion
  • SiO
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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