Atomic-order nitridation of SiO2 by nitrogen plasma

Takuya Seino; Takashi Matsuura; Junichi Murota

doi:10.1002/sia.1336

Atomic-order nitridation of SiO₂ by nitrogen plasma

Takuya Seino, Takashi Matsuura, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Atomic-order nitridation of ∼30 Å thick SiO₂ has been investigated by an electron-cyclotron-resonance nitrogen plasma. It is found that the number of nitrogen atoms in the nitrided SiO₂ film increases with plasma exposure time and tends to saturate. In the initial nitridation of SiO₂, the number of nitrogen atoms in the nitrided SiO₂ film depends mainly on the number of incident ions, in dependence on the surface temperature. In the saturation region of the nitridation, it is found that the nitrogen concentration and the depth of the nitrided SiO₂ increase with increasing ion energy as well as surface temperature. In the nitridation of SiO₂, it is found that the nitrogen bonding structure in the nitrided SiO₂ film is changed by ion irradiation with an energy of ∼12 eV and by the temperature increase of the irradiated surface.

Original language	English
Pages (from-to)	451-455
Number of pages	5
Journal	Surface and Interface Analysis
Volume	34
Issue number	1
DOIs	https://doi.org/10.1002/sia.1336
Publication status	Published - 2002 Aug 1
Event	ECASIA'01 Proceedings of the 9th European Conference on Applications of Suface and Interface Analysis - Avignon, France Duration: 2001 Sep 30 → 2001 Oct 5

Keywords

Atomic-order nitridation
Ion energy
Nitrogen plasma
Radical and ion
SiO
XPS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1002/sia.1336

Fingerprint Dive into the research topics of 'Atomic-order nitridation of SiO<sub>2</sub> by nitrogen plasma'. Together they form a unique fingerprint.

Cite this

@article{3a392420214940f0b35eb38a53133fc5,

title = "Atomic-order nitridation of SiO2 by nitrogen plasma",

abstract = "Atomic-order nitridation of ∼30 {\AA} thick SiO2 has been investigated by an electron-cyclotron-resonance nitrogen plasma. It is found that the number of nitrogen atoms in the nitrided SiO2 film increases with plasma exposure time and tends to saturate. In the initial nitridation of SiO2, the number of nitrogen atoms in the nitrided SiO2 film depends mainly on the number of incident ions, in dependence on the surface temperature. In the saturation region of the nitridation, it is found that the nitrogen concentration and the depth of the nitrided SiO2 increase with increasing ion energy as well as surface temperature. In the nitridation of SiO2, it is found that the nitrogen bonding structure in the nitrided SiO2 film is changed by ion irradiation with an energy of ∼12 eV and by the temperature increase of the irradiated surface.",

keywords = "Atomic-order nitridation, Ion energy, Nitrogen plasma, Radical and ion, SiO, XPS",

author = "Takuya Seino and Takashi Matsuura and Junichi Murota",

year = "2002",

month = aug,

day = "1",

doi = "10.1002/sia.1336",

language = "English",

volume = "34",

pages = "451--455",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley and Sons Ltd",

number = "1",

note = "ECASIA'01 Proceedings of the 9th European Conference on Applications of Suface and Interface Analysis ; Conference date: 30-09-2001 Through 05-10-2001",

}

TY - JOUR

T1 - Atomic-order nitridation of SiO2 by nitrogen plasma

AU - Seino, Takuya

AU - Matsuura, Takashi

AU - Murota, Junichi

PY - 2002/8/1

Y1 - 2002/8/1

N2 - Atomic-order nitridation of ∼30 Å thick SiO2 has been investigated by an electron-cyclotron-resonance nitrogen plasma. It is found that the number of nitrogen atoms in the nitrided SiO2 film increases with plasma exposure time and tends to saturate. In the initial nitridation of SiO2, the number of nitrogen atoms in the nitrided SiO2 film depends mainly on the number of incident ions, in dependence on the surface temperature. In the saturation region of the nitridation, it is found that the nitrogen concentration and the depth of the nitrided SiO2 increase with increasing ion energy as well as surface temperature. In the nitridation of SiO2, it is found that the nitrogen bonding structure in the nitrided SiO2 film is changed by ion irradiation with an energy of ∼12 eV and by the temperature increase of the irradiated surface.

AB - Atomic-order nitridation of ∼30 Å thick SiO2 has been investigated by an electron-cyclotron-resonance nitrogen plasma. It is found that the number of nitrogen atoms in the nitrided SiO2 film increases with plasma exposure time and tends to saturate. In the initial nitridation of SiO2, the number of nitrogen atoms in the nitrided SiO2 film depends mainly on the number of incident ions, in dependence on the surface temperature. In the saturation region of the nitridation, it is found that the nitrogen concentration and the depth of the nitrided SiO2 increase with increasing ion energy as well as surface temperature. In the nitridation of SiO2, it is found that the nitrogen bonding structure in the nitrided SiO2 film is changed by ion irradiation with an energy of ∼12 eV and by the temperature increase of the irradiated surface.

KW - Atomic-order nitridation

KW - Ion energy

KW - Nitrogen plasma

KW - Radical and ion

KW - SiO

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0036694118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036694118&partnerID=8YFLogxK

U2 - 10.1002/sia.1336

DO - 10.1002/sia.1336

M3 - Conference article

AN - SCOPUS:0036694118

VL - 34

SP - 451

EP - 455

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

T2 - ECASIA'01 Proceedings of the 9th European Conference on Applications of Suface and Interface Analysis

Y2 - 30 September 2001 through 5 October 2001

ER -