Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

Takashi Matsuura, Yasuhiko Honda, Junichi Murota

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Atomic-order layer-by-layer etching of silicon nitride has been investigated using an ultraclean electron-cyclotron-resonance plasma. The surface nitrogen atoms in silicon nitride within only about one atomic layer from the surface were found to be removed selectively by excited hydrogen gas under well-controlled conditions. The remaining outermost silicon atoms were removed selectively by irradiation of a low-energy Ar+ and H+ ion mixture. By repeating these role-share cycles alternately, the resultant etching amount per cycle corresponded to one mean atomic layer of silicon nitride.

Original languageEnglish
Pages (from-to)3573-3575
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number23
DOIs
Publication statusPublished - 1999 Jun 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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