Abstract
Atomic-order layer-by-layer etching of silicon nitride has been investigated using an ultraclean electron-cyclotron-resonance plasma. The surface nitrogen atoms in silicon nitride within only about one atomic layer from the surface were found to be removed selectively by excited hydrogen gas under well-controlled conditions. The remaining outermost silicon atoms were removed selectively by irradiation of a low-energy Ar+ and H+ ion mixture. By repeating these role-share cycles alternately, the resultant etching amount per cycle corresponded to one mean atomic layer of silicon nitride.
Original language | English |
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Pages (from-to) | 3573-3575 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 23 |
DOIs | |
Publication status | Published - 1999 Jun 7 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)