Atomic motion induced by a scanning tunneling microscope tip on the Si(111) surface

T. Nakayama, T. Eguchi, M. Aono

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Using scanning tunneling microscopy (STM), we have observed the STM-tip-induced atomic motion of the Si adatoms in the Si(111)-(7 × 7) surface structure near out-of-phase boundaries in the structure. In order to excite the motion of Si adatoms, the tip was fixed at a certain height at every pixel in the lateral scan and the sample bias was changed stepwise. Although the motion of Si adatoms occurs in a complicated manner, analysis shows that its elemental process is quite simple. Namely, the Si adatom jumps from an occupied T4 site to an unoccupied T4 site.

Original languageEnglish
Pages (from-to)L101-L104
JournalSurface Science
Volume320
Issue number3
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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