Abstract
Using scanning tunneling microscopy (STM), we have observed the STM-tip-induced atomic motion of the Si adatoms in the Si(111)-(7 × 7) surface structure near out-of-phase boundaries in the structure. In order to excite the motion of Si adatoms, the tip was fixed at a certain height at every pixel in the lateral scan and the sample bias was changed stepwise. Although the motion of Si adatoms occurs in a complicated manner, analysis shows that its elemental process is quite simple. Namely, the Si adatom jumps from an occupied T4 site to an unoccupied T4 site.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 320 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1994 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
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Nakayama, T., Eguchi, T., & Aono, M. (1994). Atomic motion induced by a scanning tunneling microscope tip on the Si(111) surface. Surface Science, 320(3). https://doi.org/10.1016/0039-6028(94)90305-0