Atomic motion induced by a scanning tunneling microscope tip on the Si(111) surface

T. Nakayama, Toyoaki Eguchi, M. Aono

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using scanning tunneling microscopy (STM), we have observed the STM-tip-induced atomic motion of the Si adatoms in the Si(111)-(7 × 7) surface structure near out-of-phase boundaries in the structure. In order to excite the motion of Si adatoms, the tip was fixed at a certain height at every pixel in the lateral scan and the sample bias was changed stepwise. Although the motion of Si adatoms occurs in a complicated manner, analysis shows that its elemental process is quite simple. Namely, the Si adatom jumps from an occupied T4 site to an unoccupied T4 site.

Original languageEnglish
JournalSurface Science
Volume320
Issue number3
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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