Atomic level control of sige epitaxy and doping

Bernd Tillack, Yuji Yamamoto, Junichi Murota

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

One of the main requirements for nanoscaling and nanotechnology is atomic-order control of process technology for device fabrication. Here we show the concept of atomic-level processing based on atomic-order surface reaction control. This concept is demonstrated for Si-based group IV heterodevices, which are becoming increasingly attractive as high-speed devices for telecommunication. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. By this way the process is controlled by the surface adsorption equilibrium only. Self-limiting processes at atomic level and very low process temperature (even room temperature) are reached. Atomic level control is shown for P, B, and C doping.

Original languageEnglish
Pages803-813
Number of pages11
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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    Tillack, B., Yamamoto, Y., & Murota, J. (2004). Atomic level control of sige epitaxy and doping. 803-813. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.