Atomic level control in gas source MBE growth of cubic SiC

Tatsuo Yoshinobu, Michiaki Nakayama, Hiromu Shiomi, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - 1990 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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