Atomic layer etching of silicon by thermal desorption method

Shigeru Imái, Takeo Haga1, Osamu Matsuzaki, Takeo Hattori, Masakiyo Matsumura

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    Atomic layer etching of Si has been realized by modulating the substrate temperature synchronized with chlorine gas irradiation. This is based on the surface chemistry wherein chlorine atoms adsorbed on the clean Si surface at room temperature are thermally desorbed as SiCI2 over 650°C. For Si(lll) substrates, the etching rate R was saturated at about 3/7 monolayer per cycle for the peak temperature of more than 675°C. The saturated etching rate corresponds to half the number of rest atoms of the Si(lll) 7x7 surface. The chlorine dosage for the saturation was about 3.5 mTorr x 4 s. The experimental results agreed well with the theoretical estimations based on the desorption kinetics of SiCI2. The increase of the surface roughness by etching was less than one monolayer.

    Original languageEnglish
    Pages (from-to)5049-5053
    Number of pages5
    JournalJapanese journal of applied physics
    Volume34
    Issue number9R
    DOIs
    Publication statusPublished - 1995 Sep

    Keywords

    • Atomic layer etching
    • Chlorine
    • Self-limiting adsorption
    • Silicon
    • Thermal desorption

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Imái, S., Haga1, T., Matsuzaki, O., Hattori, T., & Matsumura, M. (1995). Atomic layer etching of silicon by thermal desorption method. Japanese journal of applied physics, 34(9R), 5049-5053. https://doi.org/10.1143/JJAP.34.5049