Atomic layer etching of silicon by thermal desorption method

Shigeru Imái, Takeo Haga1, Osamu Matsuzaki, Takeo Hattori, Masakiyo Matsumura

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Atomic layer etching of Si has been realized by modulating the substrate temperature synchronized with chlorine gas irradiation. This is based on the surface chemistry wherein chlorine atoms adsorbed on the clean Si surface at room temperature are thermally desorbed as SiCI2 over 650°C. For Si(lll) substrates, the etching rate R was saturated at about 3/7 monolayer per cycle for the peak temperature of more than 675°C. The saturated etching rate corresponds to half the number of rest atoms of the Si(lll) 7x7 surface. The chlorine dosage for the saturation was about 3.5 mTorr x 4 s. The experimental results agreed well with the theoretical estimations based on the desorption kinetics of SiCI2. The increase of the surface roughness by etching was less than one monolayer.

Original languageEnglish
Pages (from-to)5049-5053
Number of pages5
JournalJapanese journal of applied physics
Issue number9R
Publication statusPublished - 1995 Sep
Externally publishedYes


  • Atomic layer etching
  • Chlorine
  • Self-limiting adsorption
  • Silicon
  • Thermal desorption

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Atomic layer etching of silicon by thermal desorption method'. Together they form a unique fingerprint.

Cite this