Atomic-layer etching of Ge using an ultraclean ECR plasma

Takayuki Sugiyama, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Self-limited atomic-layer etching of Ge(100) has been investigated by alternated chlorine adsorption and Ar + ion irradiation using an ultraclean ECR plasma. With short Ar + ion irradiation, about a quarter of atomic-layer thickness was etched in each cycle under the saturated adsorption condition, which corresponds with the case of Si(100). With increasing irradiation amount of Ar + ions, the etch rate per cycle increases and tends to saturate to the atomic-layer thickness of Ge(100). Taking Ar + ion induced reaction into consideration, a simple exponentially-saturating equation well describes the atomic-layer etch rate of Ge. From measured Ar + ion flux density distribution, it is estimated that the energy of Ar + ions predominantly contributing to the atomic-layer etching of Ge is higher than the order of ∼13 eV.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalApplied Surface Science
Volume112
DOIs
Publication statusPublished - 1997 Mar

Keywords

  • Ar ion induced reaction
  • Atomic-layer etching
  • Chlorine adsorption
  • ECR plasma
  • Ge, Self-limited process

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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