Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Akihiro Ohtake, Takashi Hanada, Kenta Arai, Takuji Komura, Shiro Miwa, Kozo Kimura, Tetsuji Yasuda, Chengguo Jin, Takafumi Yao

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