Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Akihiro Ohtake, Takashi Hanada, Kenta Arai, Takuji Komura, Shiro Miwa, Kozo Kimura, Tetsuji Yasuda, Chengguo Jin, Takafumi Yao

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Atomic layer epitaxy (ALE) processes of ZnSe on GaAs(0 0 1) have been studied by using reflection high-energy electron diffraction and total-reflection-angle X-ray spectroscopy in real time. We have obtained direct evidence that the growing film of ZnSe(0 0 1) changes its surface chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The growth rate of ZnSe has been estimated to be about 0.5 BL per ALE cycle, which can be consistent with the previously proposed structure models for these reconstructed surfaces.

Original languageEnglish
Pages (from-to)490-493
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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