Atomic layer epitaxy of GaAs using triethylgallium and arsine

Hideo Ohno, S. Ohtsuka, H. Ishii, Y. Matsubara, H. Hasegawa

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32 Citations (Scopus)

Abstract

Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.

Original languageEnglish
Pages (from-to)2000-2002
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number20
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ohno, H., Ohtsuka, S., Ishii, H., Matsubara, Y., & Hasegawa, H. (1989). Atomic layer epitaxy of GaAs using triethylgallium and arsine. Applied Physics Letters, 54(20), 2000-2002. https://doi.org/10.1063/1.101195