Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Takashi Fuyuki, Michiaki Nakayama, Tatsuo Yoshinobu, Hiromu Shiomi, Hiroyuki Matsunami

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si2H6 and C2H2 were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.

Original languageEnglish
Pages (from-to)461-463
Number of pages3
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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