Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

The low-temperature Si growth on the atomic-layer order nitrided Si surface with N amount of 1-6×1014 cm-2 formed by NH3 reaction at 400°C was discussed. It was suggested that crystallinity of Si film deposited on the atomic-layer order nitrided Si was degraded by the existence of Si3N4 structure. The depth profile of N atomic-layer doped Si film was found to showed that the N atoms were confined with about 1-nm-thick region.

Original languageEnglish
Pages (from-to)3472-3474
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number20
DOIs
Publication statusPublished - 2003 May 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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