Atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy

F. Hirose, Y. Kinoshita, S. Shibuya, H. Miya, K. Hirahara, Y. Kimura, M. Niwano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied SiC2 ALD processes with precursors of tris(dimethylamino)silane (TDMAS) and ozone on Si(100) surfaces at room temperature by infrared absorption spectroscopy with a multiple internal reflection geometry. It was found that TDMAS dissociatively adsorbs on OH sites of hydroxyrated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced in the course of the TDMAS adsorption. Compensation of OH sites by a water vapor treatment after the ozone process is effective to sustain the cyclic Si02 deposition.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages171-177
Number of pages7
Edition1
DOIs
Publication statusPublished - 2008 Nov 13
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • Engineering(all)

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    Hirose, F., Kinoshita, Y., Shibuya, S., Miya, H., Hirahara, K., Kimura, Y., & Niwano, M. (2008). Atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 171-177). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911497