Atomic-layer-deposition of SiO2 with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy

F. Hirose; Y. Kinoshita; S. Shibuya; H. Miya; K. Hirahara; Yasuo Kimura; M. Niwano

doi:10.1149/1.2911497

Atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy

F. Hirose, Y. Kinoshita, S. Shibuya, H. Miya, K. Hirahara, Yasuo Kimura, M. Niwano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

We have studied SiC₂ ALD processes with precursors of tris(dimethylamino)silane (TDMAS) and ozone on Si(100) surfaces at room temperature by infrared absorption spectroscopy with a multiple internal reflection geometry. It was found that TDMAS dissociatively adsorbs on OH sites of hydroxyrated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced in the course of the TDMAS adsorption. Compensation of OH sites by a water vapor treatment after the ozone process is effective to sustain the cyclic Si0₂ deposition.

Original language	English
Title of host publication	ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	171-177
Number of pages	7
Edition	1
DOIs	https://doi.org/10.1149/1.2911497
Publication status	Published - 2008
Externally published	Yes
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States Duration: 2008 May 18 → 2008 May 22

Publication series

Name	ECS Transactions
Number	1
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
Country/Territory	United States
City	Phoenix, AZ
Period	08/5/18 → 08/5/22

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2911497

Cite this

Hirose, F., Kinoshita, Y., Shibuya, S., Miya, H., Hirahara, K., Kimura, Y., & Niwano, M. (2008). Atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 171-177). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911497

Atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy. / Hirose, F.; Kinoshita, Y.; Shibuya, S. et al.

ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1. ed. 2008. p. 171-177 (ECS Transactions; Vol. 13, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hirose, F, Kinoshita, Y, Shibuya, S, Miya, H, Hirahara, K, Kimura, Y & Niwano, M 2008, Atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy. in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 13, pp. 171-177, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2911497

Hirose F, Kinoshita Y, Shibuya S, Miya H, Hirahara K, Kimura Y et al. Atomic-layer-deposition of SiO₂ with tris(dimethylamino)silane (TDMAS) and ozone investigated by infrared absorption spectroscopy. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. 2008. p. 171-177. (ECS Transactions; 1). https://doi.org/10.1149/1.2911497

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