Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment

F. Hirose, Y. Kinoshita, S. Shibuya, Y. Narita, Y. Takahashi, H. Miya, K. Hirahara, Y. Kimura, Michio Niwano

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Atomic layer deposition of SiO2 from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at near-room temperatures was studied by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS can be adsorbed at OH sites on hydroxylated Si surfaces at room temperature. Ozone oxidation of the TDMAS-treated Si surface is effective in removing hydroaminocarbon adsorbates introduced during TDMAS adsorption at room temperature. After oxidation by ozone, treatment with H 2O vapor at a substrate temperature of around 160 °C causes regeneration of OH sites for TDMAS adsorption. Cycles involving TDMAS adsorption and ozonization at room temperature followed by H2O treatment at 160 °C permit the buildup of layers of SiO2. The amount of residual hydroaminocarbon at the interface between the growing SiO2 film and the substrate can be reduced with the ozone treated Si surface as a starting surface.

Original languageEnglish
Pages (from-to)270-275
Number of pages6
JournalThin Solid Films
Volume519
Issue number1
DOIs
Publication statusPublished - 2010 Oct 29

Keywords

  • Adsorption
  • Atomic layer deposition
  • Infrared absorption spectroscopy
  • Ozone
  • Silicon dioxide
  • Water vapor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Hirose, F., Kinoshita, Y., Shibuya, S., Narita, Y., Takahashi, Y., Miya, H., Hirahara, K., Kimura, Y., & Niwano, M. (2010). Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment. Thin Solid Films, 519(1), 270-275. https://doi.org/10.1016/j.tsf.2010.07.107