Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalConference article

Abstract

We have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

Original languageEnglish
Pages (from-to)47-52
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume745
Publication statusPublished - 2002 Dec 1
Externally publishedYes
EventNovel Materials and Processes for Advanced CMOS - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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