Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.

Original languageEnglish
Title of host publicationESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Pages83-86
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 12
Externally publishedYes
Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
Duration: 2011 Sep 122011 Sep 16

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other41st European Solid-State Device Research Conference, ESSDERC 2011
CountryFinland
CityHelsinki
Period11/9/1211/9/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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